Epitaxy of semiconductor nano-structures for achieving novel electronic and optoelectronic properties.

1. “Fabrication of dislocation-free Si films under uniaxial tension on porous Si compliant substrates”, Jeehwan Kim, Jae Young Lee, Ya-Hong Xie, Thin Solid Films, in press (2008);
2. “3-D Finite Element Simulation of a PCRAM Cell with a Novel Self-insulated Structure”, Ke Sun, Feng Wen and Ya-Hong Xie, submitted to J. Appl. Phys. (2008);
3. “The proximity effect of the regrowth interface on two-dimensional electron density in strained Si”, J. Lie, T. M. Lu, J. Kim, K. Lai, D. C. Tsui, and Ya-Hong Xie Appl. Phys. Lett. 92, 112113 (2008);
4. “Epitaxial growth of two-dimensional electron gas (2DEG) in strained silicon for research on ultra-low energy electronic processes”, J. Liu, J.H. Kim, Y. H. Xie, T. M. Lu, K. Lai, and D. C. Tsui, Thin Solid Films, in press (2008);
5. “A method for fabricating dislocation-free tensile-strained SiGe films via the oxidation of porous Si substrates”, Jeehwan Kim, Biyun Li, and Ya-Hong Xie Appl. Phys. Lett. 91, 252108 (2007).
6. “Germanium-on-SOI photo-detector based on an FET structure”, Subal Sahni, Eli Yablonovitch, J Liu and Y.H. Xie, IEEE/OSA Conference on Lasers and Electro-Optics (CLEO), Baltimore, MD, May 2007.
7. “Microstructure Analysis of Epitaxially Grown Self-Assembled Ge Islands on Nanometer-Scale Patterned SiO₂/Si Substrates by High-Resolution Transmission Electron Microscopy”, T.S. Yoon, H.M. Kim, K.B. Kim, D.Y. Ryu, T.P. Russell, Z.M. Zhao, J. Liu, and Y.H. Xie, J. Appl. Phys. v.102, 104306 (2007).
8. “Monolithic integrated modulator on silicon for optical interconnects”, Shi B, Chang PS, Sun K, Xie YH, Radhakrishnan, Monbouquette HG, IEEE PHOTONICS TECHNOLOGY LETTERS 19 (2-4): 55-57 JAN-FEB 2007.
9. “Capacitively induced high mobility two-dimensional electron gas in undoped Si/SiGe heterostructures with atomic-layer-deposited dielectric”, T.M. Lu, J. Liu, J. Kim, K. Lai, D.C. Tsui, and Y. H. Xie, Appl. Phys. Lett., 90, 182114 (2007).
10. “Lateral arrangement of Ge self-assembled quantum dots on a partially relaxed SiGe buffer layer”, H.J. Kim, Y.H. Xie and K.L. Wang, Ch. 7, page 209 in “Lateral Alingnment of Epitaxial Quantum Dots” O.G. Schmidt, ed., Springer, Berlin (2007).
11. “Study of the nickel metallization in macroporous silicon using wet chemistry”, X. Zhang, K.N. Tu, and Y.H. Xie, submitted to IEEE Trans. Semicond. Manufac.
12. “Nickel displacement deposition of porous silicon with ultrahigh aspect ratio”, C.K. Xu, Xi Zhang, K.N. Tu, Y.H. Xie, Journal of the Electrochemical Society, 154 (3), D170-D174, 2007.
13. “Theoretical studies of displacement deposition of nickel into porous silicon with ultrahigh aspect ratio”, C.K. Xu, M.H. Li, Xi Zhang, K.N. Tu, Y.H. Xie, Electrochimica Acta, 52 (12), 3901-3909, 2007.
14. “Monolithic integrated modulator on silicon for optical interconnects”, B. Shi, P. S. Chang, K. Sun, Y.H. Xie, C. Radhakrishnan, and H.G. Monbouquette, IEEE Photon. Techn. Lett., v.19, 55 (2007).